Dielectric and ferroelectric properties of Perovskite Pb(Zr, Ti)O3 films deposited by sputtering on Si substrate

被引：7
|
作者：
Vélu, G [1 ]
Rèmiens, G [1 ]
机构：
[1] Univ Valenciennes & Hainaut Cambresis, Lab Mat Avances Ceram, F-59600 Maubeuge, France
来源：
MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 02期
关键词：
D O I：
10.1016/S0026-2714(98)00216-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lead zirconate titanate (PZT) thin films were deposited by radio-frequency (r.f.) magnetron sputtering with stoichiometric single oxide target on silicon substrates. The influence of the growth conditions (with or without substrate heating) and the post-annealing treatments (conventional or rapid thermal annealing) on the film properties in terms of structure and microstructure was systematically evaluated. The electrical properties such as the dielectric constant, the loss factor, the leakage current and the ferroelectric properties have been characterized. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：241 / 250
页数：10
相关论文
共 50 条
  • [1] Preparation of (Pb, La) (Zr, Ti)O3 ferroelectric films by RF sputtering on large substrate
    Suu, K.
    Osawa, A.
    Tani, N.
    Ishikawa, M.
    Nakamura, K.
    Ozawa, T.
    Sameshima, K.
    Kamisawa, A.
    Takasu, H.
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (9 B): : 4967 - 4971
  • [2] Measurement and Modeling of Dielectric Properties of Pb(Zr,Ti)O3 Ferroelectric Thin Films
    Renoud, Raphael
    Borderon, Caroline
    Gundel, Hartmut W.
    IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2011, 58 (09) : 1975 - 1980
  • [3] Piezoelectric and dielectric properties of Pb(Zr,Ti)O3 ferroelectric bilayers
    Grigoriev, Alexei
    Yang, Chun
    Azad, Mandana Meisami
    Causey, Oliver
    Walko, Donald A.
    Tinberg, Daniel S.
    Trolier-McKinstry, Susan
    PHYSICAL REVIEW B, 2015, 91 (10):
  • [4] Dielectric Properties of (Pb,La)(Zr,Ti)O3 Ferroelectric Ceramics
    Blanco, O.
    Martinez, E.
    Vital, J.
    Correa, A.
    INTEGRATED FERROELECTRICS, 2008, 101 : 44 - 49
  • [5] Enhanced dielectric and ferroelectric properties of Pb(Zr0.8Ti0.2)O3/Pb(Zr0.2Ti0.8)O3 multilayer films
    Liu, Hong
    Gong, Xiaogang
    Liang, Jin-e
    Li, Xuedong
    Xiao, Dingquan
    Zhu, Jianguo
    Pu, Zhaohui
    APPLIED PHYSICS LETTERS, 2007, 91 (12)
  • [6] Growth and properties of PbTiO3/Pb(Zr, Ti)O3 heterostructures deposited by sputtering on Si substrates
    Velu, G
    Haccart, T
    Remiens, D
    INTEGRATED FERROELECTRICS, 1999, 23 (1-4) : 1 - 14
  • [7] Growth and properties of PbTiO3/Pb(Zr, Ti)O3 heterostructures deposited by sputtering on Si substrates
    Lab. des Mat. Avances, Ceramiques, Univ. Valenciennes Hainaut-Cambresis, Z.I. Champ de l' Abbesse, 59600 Maubeuge, France
    Integrated Ferroelectrics, 1999, 23 (01): : 1 - 14
  • [8] RF PLANAR MAGNETRON SPUTTERING AND CHARACTERIZATION OF FERROELECTRIC PB(ZR,TI)O3 FILMS
    KRUPANIDHI, SB
    MAFFEI, N
    SAYER, M
    ELASSAL, K
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6601 - 6609
  • [9] Enhanced dielectric and ferroelectric properties of Pb(Zr0.8Ti0.2)O3/Pb(Zr0.2Ti0.8)O3 multilayered thin films prepared by rf magnetron sputtering
    Wu, J. G.
    Xiao, D. Q.
    Zhu, J. G.
    Zhu, J. L.
    Tan, J. Z.
    Zhang, Q. L.
    APPLIED PHYSICS LETTERS, 2007, 90 (08)
  • [10] Structure and electrical properties of RF-sputtering deposited thin ferroelectric Pb(Zr0.52Ti0.48)O3 films
    Tunkasiri, T
    Qin, Y
    Nhuapeng, W
    Thamjaree, W
    JOURNAL OF MATERIALS SCIENCE LETTERS, 2000, 19 (21) : 1913 - 1916
12345