Synthesis and optical characterization of novel Sr3Ga2O6:Eu3+ phosphor

被引:8
作者
Moon, Chuer Hyun [1 ]
Singh, S. K. [2 ]
Lee, Dong Gi [1 ]
Yi, Soung Soo [1 ]
Jang, Kiwan [2 ]
Jeong, Jung Hyun [3 ]
Bae, Jong-Seong [4 ]
Shin, Dong-Soo [5 ]
机构
[1] Silla Univ, Dept Elect Mat Engn, Pusan 617736, South Korea
[2] Changwon Natl Univ, Dept Phys, Chang Won 641773, South Korea
[3] Pukyong Natl Univ, Dept Phys, Pusan 608737, South Korea
[4] Korea Basic Sci Inst, Busan Ctr, Pusan 618230, South Korea
[5] Changwon Natl Univ, Dept Chem, Chang Won 641773, South Korea
基金
新加坡国家研究基金会;
关键词
Sr3Ga2O6; Photoluminescence; Red emitting phosphor; LUMINESCENCE;
D O I
10.1016/j.ceramint.2012.05.075
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Alkaline earth metal gallets have been identified as an important ceramic material. The crystal chemistry of many of these gallets is well explored; however, very rare studies regarding optical properties of rare earth (RE) ions doped in such gallets, particularly in Sr3Ga2O6 host, have been carried out. The present study reports on synthesis and characterization of novel Sr3Ga2O6:Eu3+ phosphors. The phosphors have been synthesized using a conventional solid state reaction method. Crystal structure, morphology and luminescence properties (excitation, emission and CIE coordinate) of these phosphors have been studied as a function of sintering temperature and Eu3+ concentration. X-ray diffraction study reveals that the phosphor sintered at low temperature (900 degrees C) contains an impurity phase which is removed at higher sintering temperatures and results into cubic crystalline phase of Sr3Ga2O6. Particle size of the phosphor increases with an increase in sintering temperature which results to a red shift in the peak position of excitation band lying in a broad range from 250 to 370 nm. Optimum emission intensity is attained for 0.12 mol% concentration of Eu3+ ions; above this concentration, a quenching in emission intensity is observed. (c) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:6789 / 6794
页数:6
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