Growth of high Bi concentration GaAs1-xBix by molecular beam epitaxy

被引：138

作者：

Lewis, R. B. ^{[1
,2
]}

Masnadi-Shirazi, M. ^{[2
,3
]}

Tiedje, T. ^{[2
]}

机构：

[1] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada

[2] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC V8W 3P6, Canada

[3] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T 1Z4, Canada

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 08期

关键词：

GAAS;

D O I：

10.1063/1.4748172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation of Bi is investigated in the molecular beam epitaxy growth of GaAs1-xBix. Bi content increases rapidly as the As-2:Ga flux ratio is lowered to 0.5 and then saturates for lower flux ratios. Growth under Ga and Bi rich conditions shows that Bi content increases strongly with decreasing temperature. A model is proposed where Bi from a wetting layer incorporates through attachment to Ga-terminated surface sites. The weak Ga-Bi bond can be broken thermally, ejecting Bi back into the wetting layer. Highly crystalline films with up to 22% Bi were grown at temperatures as low as 200 degrees C. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748172]

引用

页数：4

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