Lattice thermal conductivity and spectral phonon scattering in FeVSb-based half-Heusler compounds

被引：57
作者：
Zhu, T. J. [1 ,2 ,3 ]
Fu, C. G. [1 ,2 ]
Xie, H. H. [1 ,2 ]
Liu, Y. T. [1 ,2 ]
Feng, B. [1 ,2 ]
Xie, J. [1 ,2 ]
Zhao, X. B. [1 ,2 ,4 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
[3] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Zhejiang, Peoples R China
[4] Zhejiang Univ, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Hangzhou 310027, Zhejiang, Peoples R China
来源：
EPL | 2013年 / 104卷 / 04期
关键词：
THERMOELECTRIC PROPERTIES; ZRNISN; BAND;
D O I：
10.1209/0295-5075/104/46003
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Alloying and grain refinement have been conducted to reduce the lattice thermal conductivity of FeVSb-based half-Heusler compounds. And the effects of point defect and boundary on phonon scattering are analyzed using the Callaway model. Point defect scattering and boundary scattering, respectively, cut out the high-frequency and low-frequency phonons. Consequently, most of the heat (similar to 70%) is carried by phonons with mean free path (mfp) in the range of 1-80 nm and 0.6-30 nm at Debye temperature and 650K, respectively, indicating that further reduction in lattice thermal conductivity should enhance the scattering of phonons with these characteristic mfp. Copyright (C) EPLA, 2013
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页数：5
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