Radiation damage in p-type silicon irradiated with neutrons and protons

被引：42

作者：

Cindro, Vladimir ^{[1
,2
]}

Kramberger, Gregor ^{[1
,2
]}

Lozano, Manuel ^{[3
]}

Mandic, Igor ^{[1
,2
]}

Mikuz, Marko ^{[1
,2
]}

Pellegrini, Giulio ^{[3
]}

Pulko, Jozef ^{[1
,2
]}

Ullan, Miguel ^{[3
]}

Zavrtanik, Marko ^{[1
,2
]}

机构：

[1] Jozef Stefan Inst, Ljubljana 1000, Slovenia

[2] Univ Ljubljana, Ljubljana 1000, Slovenia

[3] Univ Autonoma Barcelona, Ctr Nacl Microelect, Barcelona 0893, Spain

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2009年 / 599卷 / 01期

关键词：

Silicon detector damage trapping proton neutrons; EFFECTIVE TRAPPING TIMES; CZOCHRALSKI SILICON; PAD DETECTORS; DEPENDENCE; ELECTRONS; HARDNESS; DEFECTS; HOLES; LHC;

D O I：

10.1016/j.nima.2008.11.007

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Diodes fabricated on high resistivity standard, oxygenated and magnetic Czochralski p-type materials irradiated with reactor neutrons and 24GeV/c protons LIP to an equivalent fluence of Phi(eq)=3 x 10(14) Cm(-2). Radiation effects on effective trapping times, effective dopant concentration and leakage Current were measured at 20 degrees C. Annealing of defects was performed at 20 and 60 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：60 / 65

页数：6

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