Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN

被引：40

作者：

Kuriyama, K ^{[1
]}

Tokumasu, T

Takahashi, J

Kondo, H

Okada, M

机构：

[1] Hosei Univ, Coll Engn, Tokyo 1848584, Japan

[2] Hosei Univ, Res Ctr Ion Beam Technol, Tokyo 1848584, Japan

[3] Kyoto Univ, Inst Res Reactor, Visiting Res Program, Osaka 54004, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 18期

关键词：

D O I：

10.1063/1.1477269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice distortion and the transmuted-Ge related luminescence in neutron-transmutation-doped (NTD) GaN are studied by combining Rutherford backscattering spectroscopy/channeling, Raman scattering, and photoluminescence methods. The lattice displacement of Ga atoms of similar to0.12 Angstrom from the <0001> row is estimated from the normalized angular yield profiles, preserving the single crystallinity in as-irradiated GaN with a minimum yield (chi(min)) of 7%. A 2.84 eV emission band observed in 600 degreesC annealed NTD-GaN is associated with the Ga interstitial, supporting the lattice distortion. Two emission bands at 2.90 eV and 2.25 eV observed in 1000 degreesC annealed NTD-GaN are assigned to a negatively charged DX-like center of Ge at Ga site and a complex defect attributed to Ge at Ga site and Ga vacancy, respectively. (C) 2002 American Institute of Physics.

引用

页码：3328 / 3330

页数：3

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