Temperature dependence of the equilibrium hall concentration in silicon planar-doped GaAs samples

被引:6
作者
Correa, JA
deOliveira, AG
daSilva, MIN
Moreira, MVB
Ribeiro, GM
Chacham, H
机构
[1] Departamento de Física, Instituto de Ciências Exatas, Univ. Federal de Minas Gerais, 30161-970 Belo Horizonte
关键词
semiconductors; epitaxy; electronic transport; thermodynamic properties;
D O I
10.1016/0038-1098(96)00146-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Hall concentration and mobility were measured on nine MBE grown silicon planar-doped GaAs samples as a function of the temperature in the range of 20 to 300K. Al planar-doped layers were buried in undoped GaAs layers, and all the GaAs layers were 0.20 mu m thick, except one that was 0.50 mu m. A 60 Angstrom or 80 Angstrom n(+)-GaAs cap layer was used in all samples. The nominal silicon concentration varied in the range hem 1.4x10(12)cm(-2) to 8.1x10(13)cm(-2). We found that, for measurements carried out in darkness and for temperatures below about 200K, the Hall carrier concentration n(Hall) decreases for increasing temperature. We propose a two-subband model that allows an excellent fitting to the Hall measurements. According to the model, the decrease of n(Hall) results from thermally induced changes of the relative occupation of the subbands in the planar-doped well. Copyright (C) 1996 Published by Elsevier Science Ltd
引用
收藏
页码:1063 / 1068
页数:6
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