Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry

被引：19

作者：

Xu, K. ^{[1
,2
]}

Sio, H. ^{[1
]}

Kirillov, O. A. ^{[1
]}

Dong, L. ^{[2
]}

Xu, M. ^{[2
]}

Ye, P. D. ^{[2
]}

Gundlach, D. ^{[1
]}

Nguyen, N. V. ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Semicond & Dimens Metrol Div, Gaithersburg, MD 20899 USA

[2] Purdue Univ, W Lafayette, IN 47907 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 02期

关键词：

DEPENDENCE;

D O I：

10.1063/1.4774038

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Band offsets at the interfaces of n- and p-type InP ((100) and (111) A) and atomic-layer-deposited (ALD) Al2O3 were measured with internal photoemission and spectroscopic ellipsometry. Similarly, the band offsets at the interface of semi-insulating InP (100) and ALD HfO2 were also determined. The barrier between the top of InP valence band (VB) and the bottom of Al2O3 conduction band (CB) is found to be 3.44 eV for p-type material and 3.53 eV for n-type. The photoemission thresholds are found to be sensitive to the annealing conditions, and blue shifts are observed after annealing. The offsets from InP valence band to the HfO2 conduction band for the HfO2/InP stack are found to be 3.89 eV, and we observed an increase of 60 meV if the InP surface is passivated. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774038]

引用

页数：5

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