Fully photon operated transmistor/all-optical switch based on a layered Ge1Sb2Te4 phase change medium

被引：31

作者：

Mikulics, Martin ^{[1
]}

Hardtdegen, Hilde Helen ^{[1
]}

机构：

[1] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electrons ER C, D-52425 Julich, Germany

来源：

FLATCHEM | 2020年 / 23卷

关键词：

Layered chalcogenides; Crystalline trigonal Ge1Sb2Te4; Phase-change alloys; Photonic device; All-optical switch; Transmistor; THIN-FILMS; THERMAL MANAGEMENT; WAVE-GUIDES; SILICON; MEMORY; NONVOLATILE; CRYSTALLIZATION; GE2SB2TE5; MODEL;

D O I：

10.1016/j.flatc.2020.100186

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We propose an alternative device concept which represents the foundation for future fully photon operated logic circuits based on an optically active medium. The device has the potential to decrease energy consumption and simultaneously to significantly increase computational operation speed. We call this all-optical switch device a "transmistor", since in this alternative concept a controllable train of photon pulses (optical gate) initializes substantial changes of the optical transmittance of an optically active medium by inducing structural changes therein. First results of a fully photon operated prototype of a transmistor device based on a layered phase change Ge1Sb2Te4 nano-membrane are presented. The transmittance changes of the nano-membrane's material structure determine the transmitted optical power in the functionally arranged optical device.

引用

页数：9

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