Electronic and Magnetic Properties of ZnO Doped and Co-doped with (Co, Cr)

被引：3

作者：

Rkhioui, N. ^{[1
]}

Tahiri, N. ^{[4
]}

El Bounagui, O. ^{[1
]}

Laamara, R. Ahl ^{[1
,2
,3
]}

Drissi, L. B. ^{[1
,2
]}

机构：

[1] Mohammed V Univ Rabat, Fac Sci, Modeling & Simulat, LPHE, Rabat, Morocco

[2] Mohammed V Univ Rabat, Ctr Phys & Math, CPM, Fac Sci, Rabat, Morocco

[3] CRMEF, Meknes, Morocco

[4] Mohammed V Univ Rabat, Lab Magnetism Phys & High Energy LMPHE URAC 12, BP 1014, Rabat, Morocco

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2016年 / 29卷 / 12期

关键词：

ZnO semiconductor; Electronic structure; Magnetic moment; KKR approximation; AB-INITIO; FERROMAGNETISM; GAN;

D O I：

10.1007/s10948-016-3701-1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structure and ferromagnetic properties of ZnO doped and co-doped with single and double impurities Zn1-x-y A (x) B (y) O (A = Co; B = Cr) have been investigated using the ab initio calculations with the Korringa-Kohn-Rostoker (KKR) approximations. The magnetic moment of each atom and the total magnetic moment are computed for different co-doping concentrations. The gap energies for all the components are also discussed.

引用

页码：3167 / 3173

页数：7

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