1.55μm vertical cavity surface emitting lasers with directly grown AlGaAs GaAs and AlxOy/GaAs DBR mirrors

被引：1

作者：

Bhattacharya, P ^{[1
]}

Gebretsadik, H ^{[1
]}

Qasaimeh, O ^{[1
]}

Kamath, K ^{[1
]}

Caneau, C ^{[1
]}

Bhat, R ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

VERTICAL-CAVITY SURFACE-EMITTING LASERS III | 1999年 / 3627卷

关键词：

VCSEL; long wavelength; patterned growth; oxide-confined; InAlAs wet-oxidation; oxide semiconductor DBR;

D O I：

10.1117/12.347092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is possible to grow defect-free strained layers on patterned substrates (mesas or grooves) up to thicknesses far exceeding the critical thickness. Defect nucleation and propagation are inhibited in such growth. We have exploited this property to design and fabricate InP-based 1.55 mu m vertical cavity surface emitting lasers (VCSELs). Careful photoluminescence and TEM studies have confirmed that there are no propagating defects in the GaAs/AlxGa1-xAs DBR grown on the patterned active region, or the MQW region. Lasers have been made with InP/InGaAsP bottom mirrors, laterally oxidized InAlAs current confining layers and GaAs/AlxOy top DBR mirrors. Lasers with 8-40 mu m diameter have been characterized. A threshold current of 5mA is observed at 15 degrees C for a 8 mu m diameter device; and up to 60 mu W of light output is recorded.

引用

页码：112 / 118

页数：7

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