Multiple Columns for High Throughput Complementary E-Beam Lithography (CEBL)

被引:5
作者
Liu, Enden D. [1 ]
Cong Tran [1 ]
Prescop, Ted [1 ]
Lam, David K. [1 ]
机构
[1] Multibeam Corp, Santa Clara, CA USA
来源
ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES IV | 2012年 / 8323卷
关键词
Electron Beam Lithography; Electron Beam Direct Write; Throughput; Multibeam; EDGE ROUGHNESS; SHOT-NOISE;
D O I
10.1117/12.916118
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Developers of e-beam lithography systems are pursuing diverse strategies to bolster throughput. To achieve parallelism, some e-beam efforts focus on building multiple-columns, and others focus on developing columns with multiple beamlets. In this paper, we discuss the benefits and throughput of a multiple column approach for a particular application: Complementary E-Beam Lithography (CEBL). CEBL is a novel approach where the e-beam lithography system is used only to pattern the smallest features. Everything else is patterned with existing optical lithography equipment. By working hand-in-hand with optical lithography, CEBL provides an urgently needed solution to create next-generation microchips. Moreover, CEBL is extendable for multiple technology generations. We show how a multiple column approach is the best way to meet the requirements for CEBL, including high throughput, high resolution and overlay accuracy, without excess complexity or cost.
引用
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页数:10
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