Phonon-Induced Topological Transitions and Crossovers in Dirac Materials

被引：82

作者：

Garate, Ion ^{[1
]}

机构：

[1] Yale Univ, Dept Phys, New Haven, CT 06520 USA

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 04期

关键词：

TEMPERATURE-DEPENDENCE; DIRECT-GAP; PHASE-TRANSITION; INSULATORS; EMERGENCE; SB2TE3;

D O I：

10.1103/PhysRevLett.110.046402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that electron-phonon interactions can alter the topological properties of Dirac insulators and semimetals, at both zero and nonzero temperature. Contrary to the common belief that increasing temperature always destabilizes topological phases, our results highlight instances in which phonons may lead to the appearance of topological surface states above a crossover temperature in a material that has a topologically trivial ground state. DOI: 10.1103/PhysRevLett.110.046402

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页数：5

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