InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements

被引：126

作者：

King, P. D. C. ^{[1
]}

Veal, T. D. ^{[1
]}

Kendrick, C. E. ^{[2
]}

Bailey, L. R. ^{[1
]}

Durbin, S. M. ^{[2
]}

McConville, C. F. ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8140, New Zealand

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevB.78.033308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN(0001) heterojunctions to be 0.58 +/- 0.08 eV. This is discussed within the context of previous measurements and calculations and is in agreement with the value of 0.52 +/- 0.14 eV determined from the alignment of the experimentally determined charge neutrality levels in InN and GaN. The heterojunction forms in the type-I straddling configuration with a conduction band offset of 2.22 +/- 0.10 eV.

引用

页数：4

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