Preparation of transparent conductive AZO thin films for solar cells

被引：3

作者：

Tvarozek, Vladimir ^{[1
]}

Sutta, Pavel ^{[2
]}

Novotny, Ivan ^{[1
]}

Ballo, Peter ^{[1
]}

Harmatha, Ladislav ^{[1
]}

Flickyngerova, Sofia ^{[1
]}

Prusakova, Lucie ^{[2
]}

Netrvalova, Marie ^{[2
]}

Vavrunkova, Veronika ^{[2
]}

Pullmannova, Andrea ^{[1
]}

Vavrinsky, Erik ^{[1
]}

Gaspierik, Pavol ^{[1
]}

Mikolasek, Miroslav ^{[1
]}

机构：

[1] Slovak Tech Univ, Dept Microelect, Ilkovicova 3, Bratislava 81219, Slovakia

[2] Univ West Bohemia, New Technol Ctr, Dept Mat & Technol, Plzen 30614, Czech Republic

来源：

ASDAM 2008, CONFERENCE PROCEEDINGS | 2008年

关键词：

D O I：

10.1109/ASDAM.2008.4743336

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study of the effect of technology parameters (sputtering power, substrate temperature and post-deposition annealing) on structural, electrical and optical properties of aluminium-doped zinc oxide (AZO) thin films was carried out. The optimal technology parameters of preparation were found to get necessary properties of AZO thin films for application in solar cells - the high figure of merit (F >= 4 %/Omega), low electrical sheet resistance (R-s <= 10 Omega/square) and high optical transmittance (T >= 82%, including the glass substrate).

引用

页码：275 / +

页数：2

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