Mode-locking of 2 μm Tm,Ho:YAG laser with GaInAs and GaSb-based SESAMs

被引：47
作者：
Yang, Kejian [1 ,2 ,3 ]
Heinecke, Dirk [1 ,2 ]
Paajaste, Jonna [4 ]
Koelbl, Christoph [1 ,2 ]
Dekorsy, Thomas [1 ,2 ]
Suomalainen, Soile [4 ]
Guina, Mircea [4 ,5 ]
机构：
[1] Univ Konstanz, Dept Phys, D-78457 Constance, Germany
[2] Univ Konstanz, Ctr Appl Photon, D-78457 Constance, Germany
[3] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China
[4] Tampere Univ Technol, Tampere 33720, Finland
[5] RefleKron Ltd, Tampere 33800, Finland
来源：
OPTICS EXPRESS | 2013年 / 21卷 / 04期
基金：
中国国家自然科学基金;
关键词：
THULIUM FIBER LASER; TM; OPERATION;
D O I：
10.1364/OE.21.004311
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have investigated passive mode-locking of Tm,Ho:YAG lasers with GaInAs- and GaSb-based semiconductor saturable absorber mirrors (SESAMs). With a GaInAs-based SESAM, stable dual-wavelength mode-locking operation was achieved at 2091 nm and 2097 nm, generating pulses with duration of 56.9 ps and a maximum output power of 285 mW. By using the GaSb-based SESAMs, we could generate mode-locked pulses as short as 21.3 ps at 2091 nm with a maximum output power of 63 mW. We attribute the shorter pulse duration obtained with the GaSb SESAMs to the ultrafast recovery time of the absorption and higher nonlinearity compared to standard GaInAs SESAMs. (C)2013 Optical Society of America
引用
收藏
页码：4311 / 4318
页数：8
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