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X-ray analysis of In distribution in molecular beam epitaxy grown InGaAs/GaAs quantum well structures
被引：12
作者：
Fujimoto, S
Aoki, M
Horikoshi, Y
机构：
[1] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, Tokyo 169, Japan
[2] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, Tokyo 169, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
1999年
/
38卷
/
4A期
关键词：
X-ray diffraction method;
secondary-ion mass spectroscopy;
strained InGaAs;
sticking coefficient;
surface segregation;
D O I：
10.1143/JJAP.38.1872
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs/InGaAs/GaAs quantum well structures grown on GaAs (001) by molecular beam epitaxy (MBE) at substrate temperatures between 450 degrees C and 540 degrees C are investigated using X-ray diffraction (XRD) techniques. As the substrate temperature increases, the diffraction peak angles of InGaAs shift to the lower In composition side, and the integrated diffraction spectrum of the InGaAs peaks weighted by composition x decreases. By assuming a constant segregation rate, we estimate the In desorption and segregation rates, and determine the In distribution profiles of the quantum well structures.
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页码：1872 / 1874
页数：3
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