Quasi-two-dimensional thermoelectricity in SnSe

被引：52

作者：

Tayari, V. ^{[1
]}

Senkovskiy, B. V. ^{[2
]}

Rybkovskiy, D. ^{[3
]}

Ehlen, N. ^{[2
]}

Fedorov, A. ^{[2
,4
,5
]}

Chen, C. -Y. ^{[6
,7
]}

Avila, J. ^{[6
,7
]}

Asensio, M. ^{[6
,7
]}

Perucchi, A. ^{[8
]}

di Pietro, P. ^{[8
]}

Yashina, L. ^{[9
]}

Fakih, I. ^{[1
]}

Hemsworth, N. ^{[1
]}

Petrescu, M. ^{[10
]}

Gervais, G. ^{[10
]}

Grueneis, A. ^{[2
]}

Szkopek, T. ^{[1
]}

机构：

[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada

[2] Univ Cologne, Phys Inst 2, Zulpicher Str 77, Cologne, Germany

[3] RAS, AM Prokhorov Gen Phys Inst, 38 Vavilov St, Moscow 119991, Russia

[4] IFW Dresden, POB 270116, D-01171 Dresden, Germany

[5] St Petersburg State Univ, St Petersburg 198504, Russia

[6] Synchrotron SOLEIL, ANTARES Beamline, St Aubin BP 48, F-91192 Gif Sur Yvette, France

[7] Univ Paris Saclay, St Aubin BP 48, F-91192 Gif Sur Yvette, France

[8] Elettra Sincrotrone Trieste SCpA, Area Sci Pk, I-34012 Trieste, Italy

[9] Moscow MV Lomonosov State Univ, Dept Chem, Leninskiye Gory 1-3, Moscow 119992, Russia

[10] McGill Univ, Dept Phys, Montreal, PQ H3A 2A7, Canada

来源：

PHYSICAL REVIEW B | 2018年 / 97卷 / 04期

基金：

加拿大自然科学与工程研究理事会; 欧洲研究理事会;

关键词：

SINGLE-CRYSTAL SNSE; BLACK PHOSPHORUS; ELECTRICAL-PROPERTIES; POLYCRYSTALLINE SNSE; PERFORMANCE; GROWTH; SEMICONDUCTOR; MOBILITY; FIGURE; MERIT;

D O I：

10.1103/PhysRevB.97.045424

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stannous selenide is a layered semiconductor that is a polar analog of black phosphorus and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle-resolved photoemission spectroscopy, optical reflection spectroscopy, and magnetotransport measurements reveal a multiple-valley valence-band structure and a quasi-two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to 250 cm(2)/V s at T = 1.3K. SnSe is thus found to be a high-quality quasi-two-dimensional semiconductor ideal for thermoelectric applications.

引用

页数：9

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