Radiation hardness of cryogenic silicon detectors

被引：3

作者：

Niinikoski, TO ^{[1
]}

Abreu, M

Bell, W

Berglund, P

de Boer, W

Borchi, E

Borer, K

Bruzzi, M

Buontempo, S

Casagrande, L

Chapuy, S

Cindro, V

Collins, P

D'Ambrosio, N

Da Viá, C

Devine, SRH

Dezillie, B

Dimcovski, Z

Eremin, V

Esposito, A

Granata, V

Grigoriev, E

Grohmann, S

Hauler, F

Heijne, E

Heising, S

Janos, S

Jungermann, L

Konorov, I

Li, Z

Lourenco, C

Mikuz, M

O'Shea, V

Pagano, S

Palmieri, VG

Paul, S

Pirollo, S

Pretzl, K

Mendes, PR

Ruggiero, G

Smith, K

Sonderegger, P

Sousa, P

Verbitskaya, E

Watts, S

Zavrtanik, M

机构：

[1] CERN, CH-1211 Geneva, Switzerland

[2] LIP, P-1000 Lisbon, Portugal

[3] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[4] Aalto Univ, Low Temp Lab, FI-02150 Espoo, Finland

[5] Univ Karlsruhe, IEKP, D-76128 Karlsruhe, Germany

[6] Univ Florence, Dipartimento Energet, I-50139 Florence, Italy

[7] Univ Bern, LHEP, CH-3012 Bern, Switzerland

[8] Univ Naples Federico II, Dipartimento Fis, I-80125 Naples, Italy

[9] Ist Nazl Fis Nucl, I-80125 Naples, Italy

[10] Univ Geneva, Dept Radiol, CH-1211 Geneva, Switzerland

[11] Jozef Stefan Inst, Exp Particle Phys Dept, Ljubljana 1001, Slovenia

[12] Brunel Univ, Uxbridge UB8 3PH, Middx, England

[13] Brookhaven Natl Lab, Upton, NY 11973 USA

[14] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[15] Tech Univ Munich, Phys Dept E18, D-85748 Garching, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 476卷 / 03期

关键词：

D O I：

10.1016/S0168-9002(01)01644-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We shall review test results which show that silicon detectors can withstand at 130 K temperature a fluence of 2 x 10(15)cm(-2) of 1 MeV neutrons, which is about 10 times higher than the fluence tolerated by the best detectors operated close to room temperature. The tests were carried out on simple pad devices and on microstrip detectors of different types. The devices were irradiated at room temperature using reactor neutrons, and in situ at low temperatures using high-energy protons and lead ions. No substantial difference was observed between samples irradiated at low temperature and those irradiated at room temperature. after beneficial annealing. The design of low-mass modules for low-temperature trackers is discussed briefly, together with the cooling circuits for small and large systems. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：569 / 582

页数：14

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