Thickness Dependence of Thermoelectric Properties and Maximum Output Power of Single Planar Sb2Te3 Films

被引:5
|
作者
Junlabhut, Prasopporn [1 ]
Nuthongkum, Pilaipon [2 ]
Harnwunggmoung, Adul [3 ]
Limsuwan, Pichet [1 ]
Hatayothai, Chanon [4 ]
Sakdanuphab, Rachsak [4 ]
Sakulkalavek, Aparporn [1 ]
机构
[1] King Mongkuts Inst Technol Ladkrabang, Sch Sci, Chalongkrung Rd, Bangkok 10520, Thailand
[2] Rajabhat Rajanagarindra Univ, Fac Sci, Chachoengsao 24000, Thailand
[3] Rajamangala Univ Technol Suvarnabhumi, Fac Sci & Technol, Nonthaburi 11000, Thailand
[4] King Mongkuts Inst Technol Ladkrabang, Coll Adv Mfg Innovat, Chalongkrung Rd, Bangkok 10520, Thailand
关键词
Sb2Te3; material; flexible film; thermoelectric property; power factor; BI2TE3; THIN-FILMS; P-TYPE SB2TE3; N-TYPE BI2TE3; ELECTRICAL-PROPERTIES; DEPOSITION CONDITIONS; TEMPERATURE; OPTIMIZATION;
D O I
10.3390/ma15248850
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
P-type Sb2Te3 films with different thicknesses were deposited on polyimide substrates via heat treatment-assisted DC magnetron sputtering. The correlations between the thickness variance and the structure, dislocation density, surface morphology, thermoelectric properties and output power are investigated. As a result, it is clear that the film thickness and the heat treatment process during growth are related to the diffusion of deposited atoms on the substrate surface, leading to imperfection defects inside the films. The imperfections inside the films are affected by their properties. This work also presents the thermoelectric efficiency of a planar single leg of the deposited films with various thicknesses. The maximum power factor is 2.73 mW/mK(2) obtained with a film thickness of 9.0 mu m and an applied temperature of 100 degrees C. Planar Sb2Te3 produced a maximum output power of 0.032 mu W for a temperature difference of 58 K.
引用
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页数:12
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