Local Anodic Oxidation of Phosphorus-Implanted 4H-SiC by Atomic Force Microscopy

被引：2

作者：

Lee, J- H. ^{[1
]}

Ahn, J. -J. ^{[1
]}

Hallen, A. ^{[2
]}

Zetterling, C. -M. ^{[2
]}

Koo, S. -M. ^{[1
]}

机构：

[1] Kwangwoon Univ, Semicond & Nanodevices Lab, Dept Elect Mat Engn, Seoul 136701, South Korea

[2] KTH, Royal Inst Technol, S-16440 Kista, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

基金：

新加坡国家研究基金会;

关键词：

Silicon carbide; Ion-implantation; AFM; Local anodic oxidation;

D O I：

10.4028/www.scientific.net/MSF.717-720.905

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, local oxidation behavior in phosphorus ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (LO) has been perfonned on the implanted samples, with and without activation anneal, using varying applied bias (15/20/25 V). It has been clearly shown that the post-implantation annealing process at 1650 degrees C has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.

引用

页码：905 / +

页数：2

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