Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

被引：11

作者：

Luan, Chongbiao ^{[1
]}

Lin, Zhaojun ^{[1
]}

Feng, Zhihong ^{[2
]}

Meng, Lingguo ^{[1
]}

Lv, Yuanjie ^{[1
]}

Cao, Zhifang ^{[1
]}

Yu, Yingxia ^{[1
]}

Wang, Zhanguo ^{[3
]}

机构：

[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China

[2] Hebei Semicond Res Inst, Sci & Technol ASIC Lab, Shijiazhuang 050051, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 05期

基金：

中国国家自然科学基金;

关键词：

ELECTRON-TRANSPORT; MOBILITY; GAN;

D O I：

10.1063/1.4752254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using the measured capacitance-voltage curves of Ni Schottky contacts with different areas and the current-voltage characteristics for the rectangular and circular In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors (HFETs) at low drain-source voltage, we found that the Ohmic contact processing and the gate bias cause the irregular distribution of the polarization charges at the In0.18Al0.82N/AlN interface which generates the polarization Coulomb field, and the polarization Coulomb field scattering has an important influence on the two-dimensional electron gas electron mobility in both our rectangular and circular In0.18Al0.82N/AlN/GaN HFET devices as same as in AlGaN/AlN/GaN HFET devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752254]

引用

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