Thermally Stable Operation of H-Terminated Diamond FETs by NO2 Adsorption and Al2O3 Passivation

被引：58

作者：

Hirama, Kazuyuki ^{[1
]}

Sato, Hisashi ^{[1
]}

Harada, Yuichi ^{[1
]}

Yamamoto, Hideki ^{[1
]}

Kasu, Makoto ^{[1
,2
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 08期

基金：

日本学术振兴会;

关键词：

Al2O3; passivation; diamond; field-effect transistor (FET); NO2; thermal stability; GHZ;

D O I：

10.1109/LED.2012.2200230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using the NO2 adsorption and Al2O3 passivation technique, we improved the thermal stability of hydrogen-terminated diamond field-effect transistors (FETs) and then demonstrated stable operation at 200 degrees C in a vacuum for the first time. At 200 degrees C, the drain current I-DS of a passivated diamond FET remained constant for at least more than 2 h. No degradation of FET characteristics was observed after the 200 degrees C heating cycle. Furthermore, a passivated diamond FET with a gate length of 0.2 mu m showed high maximum I-DS of -1000 mA/mm and an RF output power density of 2 W/mm.

引用

页码：1111 / 1113

页数：3

共 11 条

[1] Low-temperature Al2O3 atomic layer deposition [J].

Groner, MD ;

Fabreguette, FH ;

Elam, JW ;

George, SM .

CHEMISTRY OF MATERIALS, 2004, 16 (04) :639-645

[2] Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance [J].

Hirama, K. ;

Takayanagi, H. ;

Yamauchi, S. ;

Yang, J. H. ;

Kawarada, H. ;

Umezawa, H. .

APPLIED PHYSICS LETTERS, 2008, 92 (11)

[3] High-performance p-channel diamond MOSFETs with alumina gate insulator [J].

Hirama, Kazuyuki ;

Takayanagi, Hidenori ;

Yamauchi, Shintaro ;

Jingu, Yoshikatsu ;

Umezawa, Hitoshi ;

Kawarada, Hiroshi .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :873-+

[4] 2W/mm output power density at 1 GHz for diamond FETs [J].

Kasu, M ;

Ueda, K ;

Ye, H ;

Yamauchi, Y ;

Sasaki, S ;

Makitnoto, T .

ELECTRONICS LETTERS, 2005, 41 (22) :1249-1250

[5] Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al2O3 Overlayer and its Electric Properties [J].

Kasu, Makoto ;

Sato, Hisashi ;

Hirama, Kazuyuki .

APPLIED PHYSICS EXPRESS, 2012, 5 (02)

[6] Improvement of Hydrogen-Terminated Diamond Field Effect Transistors in Nitrogen Dioxide Atmosphere [J].

Kubovic, Michal ;

Kasu, Makoto .

APPLIED PHYSICS EXPRESS, 2009, 2 (08)

[7] Origin of surface conductivity in diamond [J].

Maier, F ;

Riedel, M ;

Mantel, B ;

Ristein, J ;

Ley, L .

PHYSICAL REVIEW LETTERS, 2000, 85 (16) :3472-3475

[8]

Pan L.S., 1995, Diamond: Electrical Properties and Applications

[9] TWO-DIMENSIONAL ELECTRON-TRANSPORT IN SEMICONDUCTOR LAYERS .1. PHONON-SCATTERING [J].

PRICE, PJ .

ANNALS OF PHYSICS, 1981, 133 (02) :217-239

[10] Electronic properties of H-terminated diamond during NO2 and O3 adsorption and desorption [J].

Sato, Hisashi ;

Kasu, Makoto .

← 1 2 →