Compositional instability in InAlN/GaN lattice-matched epitaxy

被引：30

作者：

Wei, Q. Y. ^{[1
]}

Li, T. ^{[1
]}

Huang, Y. ^{[1
]}

Huang, J. Y. ^{[1
]}

Chen, Z. T. ^{[2
]}

Egawa, T. ^{[2
]}

Ponce, F. A. ^{[1
]}

机构：

[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[2] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 09期

关键词：

INGAN ALLOYS; GAN; DISLOCATIONS; ALINN;

D O I：

10.1063/1.3690890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The InxAl1-xN/GaN system is found to show compositional instability at the lattice-matched composition (x = 0.18) in epitaxial layers grown by metal organic chemical vapor deposition. The breakdown in compositional homogeneity is triggered by threading dislocations with a screw component propagating from the GaN underlayer, which tend to open up into V-grooves at a certain thickness of the InxAl1-xN layer. The V-grooves coalesce at similar to 200 nm and are filled with material that exhibits a significant drop in indium content and a broad luminescence peak. Transmission electron microscopy suggests that the structural breakdown is due to heterogeneous nucleation and growth at the facets of the V-grooves. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3690890]

引用

页数：3

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