A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation

被引：2

作者：

Zhu, Heng ^{[1
]}

Chen, Wei ^{[1
]}

Huang, Jianhua ^{[1
]}

Wang, Zhiyu ^{[1
]}

Yu, Faxin ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Aeronaut & Astronaut, Hangzhou 310027, Zhejiang, Peoples R China

来源：

ELECTRONICS | 2019年 / 8卷 / 05期

基金：

中国国家自然科学基金;

关键词：

high-efficiency; K-band; linearity enhancement; power amplifier; GaAs pHEMT; diode compensation;

D O I：

10.3390/electronics8050487

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes the design and measured performance of a high-efficiency and linearity-enhanced K-band MMIC amplifier fabricated with a 0.15 m GaAs pHEMT processing technology. The linearization enhancement method utilizing a parallel nonlinear capacitance compensation diode was analyzed and verified. The three-stage MMIC operating at 20-22 GHz obtained an improved third-order intermodulation ratio (IM3) of 20 dBc at a 27 dBm per carrier output power while demonstrating higher than a 27 dB small signal gain and 1-dB compression point output power of 30 dBm with 33% power added efficiency (PAE). The chip dimension was 2.00 mm x 1.40 mm.

引用

页数：12

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