Characterization of temperature-dependent photoluminescence properties of InAlGaN quaternary alloys

被引：6

作者：

Hu, S. Y. ^{[1
]}

Lee, Y. C. ^{[2
]}

Weng, Y. H. ^{[3
]}

Ferguson, I. T. ^{[4
]}

Feng, Z. C. ^{[5
]}

机构：

[1] Tungfang Design Inst, Dept Digital Technol Design, Kaohsiung 82941, Taiwan

[2] Tungnan Univ, Dept Elect Engn, Shenkeng 22202, New Taipei, Taiwan

[3] Natl Taiwan Ocean Univ, Dept Elect Engn, Keelung 20224, Taiwan

[4] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA

[5] Natl Taiwan Univ, Inst Photon & Optoelect, Dept Elect Engn, Ctr Emerging Mat & Adv Devices, Taipei 10617, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 587卷

关键词：

InAlGaN alloy; Photoluminescence; X-ray diffraction; Stress; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; EPITAXIAL-GROWTH; QUANTUM-WELLS; LUMINESCENCE; EXCITON; ALINGAN; ALGAN;

D O I：

10.1016/j.jallcom.2013.10.139

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Samples containing thin InAlGaN layers grown on c-Al2O3 substrates by metalorganic chemical vapor deposition have been studied experimentally and theoretically with the help of photoluminescence measurements between 10 and 300 K. From the analysis of the temperature dependence photoluminescence spectra with the modified Bose-Einstein equation, the localization energy of excitons was estimated successfully and the value is found out to be well correlated to the strength of the electron/exciton-phonon interaction as well as the stress observed in the X-ray diffraction spectra. These results are also confirmed that the c-axis length decreases as the increasing Al/In ratio corresponding to the decreased compressive stress which would be attributed to the increased tensile stress formed by Al atoms incorporated. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：153 / 157

页数：5

共 25 条

[1] High optical quality AlInGaN by metalorganic chemical vapor deposition [J].

Aumer, ME ;

LeBoeuf, SF ;

McIntosh, FG ;

Bedair, SM .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3315-3317

[2] Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures [J].

Aumer, ME ;

LeBoeuf, SF ;

Bedair, SM ;

Smith, M ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2000, 77 (06) :821-823

[3] Electroluminescence observation of nanoscale phase separation in quaternary AlInGaN light-emitting diodes [J].

Cao, X. A. ;

Yang, Y. .

APPLIED PHYSICS LETTERS, 2010, 96 (15)

[4] LINE-SHAPES OF INTERSUBBAND AND EXCITONIC RECOMBINATION IN QUANTUM-WELLS - INFLUENCE OF FINAL-STATE INTERACTION, STATISTICAL BROADENING, AND MOMENTUM CONSERVATION [J].

CHRISTEN, J ;

BIMBERG, D .

PHYSICAL REVIEW B, 1990, 42 (11) :7213-7219

[5]

Cros A., 2006, PHYS STATUS SOLIDI, V1674, P243

[6] Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content [J].

Fernandez-Garrido, S. ;

Pereiro, J. ;

Gonzalez-Posada, F. ;

Munoz, E. ;

Calleja, E. ;

Redondo-Cubero, A. ;

Gago, R. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (04)

[7] Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes [J].

Hirayama, H .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

[8] Influence of different post-treatments on the structure and optical properties of zinc oxide thin films [J].

Hong, RJ ;

Huang, JB ;

He, HB ;

Fan, ZX ;

Shao, JD .

APPLIED SURFACE SCIENCE, 2005, 242 (3-4) :346-352

[9] Raman spectra investigation of InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition [J].

Hu, S. Y. ;

Lee, Y. C. ;

Feng, Z. C. ;

Weng, Y. H. .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (06)

[10] Investigation of defect-related optical properties in AlxInyGa1-x-yN quaternary alloys with different Al/In ratios [J].

Hu, S. Y. ;

Lee, Y. C. ;

Feng, Z. C. ;

Yang, S. H. .

JOURNAL OF LUMINESCENCE, 2012, 132 (04) :1037-1040

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