Facile fabrication of aligned arrays of ultralong CoOEP nanowires for high-performance optoelectronic devices

被引：1
|
作者：
Wang, Feng-Xia [1 ]
Liu, Yong-Qiang [1 ]
Wu, Hao-Di [1 ]
Pan, Ge-Bo [1 ]
机构：
[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
来源：
MATERIALS RESEARCH EXPRESS | 2014年 / 1卷 / 01期
基金：
中国国家自然科学基金;
关键词：
aligned arrays; ultralong nanowires; CoOEP; optoelectronic;
D O I：
10.1088/2053-1591/1/1/016303
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Aligned arrays of ultralong CoOEP nanowires were fabricated by a facile solution process. The prototype devices based on the as-obtained ordered array showed excellent optoelectronics performance with an on-to-off current ratio of 1.7 x 10(4) and an average mobility of 1.4 x 10(-3) cm(2) V-1 s(-1) in the dark. Moreover, the ordered array of CoOEP nanowires exhibited highly photosensitive field-effect transistor characteristics, which had a photoresponsivity of 3.5 mA W-1 and a photo-current/dark-current ratio of 4.3 x 10(3) at low gate voltage of 6.5 V. The facile fabrication and good photoresponse makes the CoOEP nanowire arrays promising in optoelectronic applications.
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页数：7
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