Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes

被引：101

作者：

Gin, A ^{[1
]}

Wei, Y

Hood, A

Bajowala, A

Yazdanpanah, V

Razeghi, M

Tidrow, M

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

[2] Missile Def Agcy, Washington, DC 20301 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 12期

关键词：

D O I：

10.1063/1.1686894

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the surface passivation of Type-II InAs/GaSb superlattice photodetectors using various ammonium sulfide solutions. Compared to unpassivated detectors, zero-bias resistance of treated 400 mumx400 mum devices with 8 mum cutoff wavelength was improved by over an order of magnitude to similar to20 kOmega at 80 K. Reverse-bias dark current density was reduced by approximately two orders of magnitude to less than 10 mA/cm(2) at -2 V. Dark current modeling, which takes into account trap-assisted tunneling, indicates greater than 70 times reduction in bulk trap density for passivated detectors. (C) 2004 American Institute of Physics.

引用

页码：2037 / 2039

页数：3

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