Crystal structure, thermal expansion and electrical properties of a new compound HoAl0.34Ge2

被引:5
作者
Zeng, Lingmin [1 ,3 ]
Qin, Pingli [1 ,2 ]
Chen, Yeqing [1 ]
Liu, Hongrui [1 ]
He, Wei [1 ]
Nong, Liangqin [3 ]
机构
[1] Guangxi Univ, Minist Educ, Key Lab Nonferrous Met Mat & New Proc Technol, Nanning 530004, Peoples R China
[2] Wuhan Inst Technol, Sch Sci, Wuhan 430073, Peoples R China
[3] Guangxi Univ Nationalities, Coll Phys & Elect Engn, Nanning 530006, Peoples R China
关键词
Alloys; X-ray diffraction; Crystal structure; Thermal expansion; Electrical properties;
D O I
10.1016/j.matchemphys.2008.07.008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A new ternary compound HoAl0.34Ge2 has been synthesized and studied from 298 K to 773 K by means of X-ray powder diffraction technique. The crystal structure of HoAl0.34Ge2. has been determined by using Rietveld method. The ternary compound HoAl0.34Ge2 crystallizes in the orthorhombic defect CeNiSi2 structure type (space group Cmcm, a = 0.40905(1) nm, b = 1.61575(5) nm, c= 0.39395(1) nm, Z= 4 and D-calc = 8.145 g cm(-3)). The average thermal expansion coefficients (alpha) over bar (a), (alpha) over bar (b) and (alpha) over barc of HoAl0.34Ge2 are 1.89 x 10(-5) K-1, 0.87 x 10(-5) K-1 and 1.59 x 10(-1) K-1, respectively. The average coefficient of bulk thermal expansion (alpha) over bar (V) is 4.25 x 10(-5) K-1. Electrical resistivity of (HoAlGe2)-Ge-0.34 was measured between 5 K and 300 K. It shows metallic-like behavior of concluctivity in the investigated temperature range. (C) 2008 Published by Elsevier B.V.
引用
收藏
页码:934 / 937
页数:4
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