Gated silicene as a tunable source of nearly 100% spin-polarized electrons

被引:415
作者
Tsai, Wei-Feng [1 ]
Huang, Cheng-Yi [1 ]
Chang, Tay-Rong [2 ]
Lin, Hsin [3 ]
Jeng, Horng-Tay [2 ,4 ]
Bansil, A. [3 ]
机构
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan
[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
[3] Northeastern Univ, Dept Phys, Boston, MA 02115 USA
[4] Acad Sinica, Inst Phys, Taipei 11529, Taiwan
关键词
GRAPHENE; STATE;
D O I
10.1038/ncomms2525
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Silicene is a one-atom-thick two-dimensional crystal of silicon with a hexagonal lattice structure that is related to that of graphene but with atomic bonds that are buckled rather than flat. This buckling confers advantages on silicene over graphene, because it should, in principle, generate both a band gap and polarized spin-states that can be controlled with a perpendicular electric field. Here we use first-principles calculations to show that field-gated silicene possesses two gapped Dirac cones exhibiting nearly 100% spin-polarization, situated at the corners of the Brillouin zone. Using this fact, we propose a design for a silicene-based spin-filter that should enable the spin-polarization of an output current to be switched electrically, without switching external magnetic fields. Our quantum transport calculations indicate that the proposed designs will be highly efficient (nearly 100% spin-polarization) and robust against weak disorder and edge imperfections. We also propose a Y-shaped spin/valley separator that produces spin-polarized current at two output terminals with opposite spins.
引用
收藏
页数:6
相关论文
共 39 条
[1]   QUANTUM POINT CONTACTS IN MAGNETIC-FIELDS [J].
ANDO, T .
PHYSICAL REVIEW B, 1991, 44 (15) :8017-8027
[2]   Structural transition of silicene on Ag(111) [J].
Arafune, Ryuichi ;
Lin, Chun-Liang ;
Kawahara, Kazuaki ;
Tsukahara, Noriyuki ;
Minamitani, Emi ;
Kim, Yousoo ;
Takagi, Noriaki ;
Kawai, Maki .
SURFACE SCIENCE, 2013, 608 :297-300
[3]   Graphene-like silicon nanoribbons on Ag(110): A possible formation of silicene [J].
Aufray, Bernard ;
Kara, Abdelkader ;
Vizzini, Sebastien ;
Oughaddou, Hamid ;
Leandri, Christel ;
Ealet, Benedicte ;
Le Lay, Guy .
APPLIED PHYSICS LETTERS, 2010, 96 (18)
[4]  
Awschalom David, 2009, Physics, V2, DOI 10.1103/Physics.2.50
[5]   Challenges for semiconductor spintronics [J].
Awschalom, David D. ;
Flatte, Michael E. .
NATURE PHYSICS, 2007, 3 (03) :153-159
[6]   Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium [J].
Cahangirov, S. ;
Topsakal, M. ;
Akturk, E. ;
Sahin, H. ;
Ciraci, S. .
PHYSICAL REVIEW LETTERS, 2009, 102 (23)
[7]   The electronic properties of graphene [J].
Castro Neto, A. H. ;
Guinea, F. ;
Peres, N. M. R. ;
Novoselov, K. S. ;
Geim, A. K. .
REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162
[8]   Engineering quantum anomalous/valley Hall states in graphene via metal-atom adsorption: An ab-initio study [J].
Ding, Jun ;
Qiao, Zhenhua ;
Feng, Wanxiang ;
Yao, Yugui ;
Niu, Qian .
PHYSICAL REVIEW B, 2011, 84 (19)
[9]   Electrically tunable band gap in silicene [J].
Drummond, N. D. ;
Zolyomi, V. ;
Fal'ko, V. I. .
PHYSICAL REVIEW B, 2012, 85 (07)
[10]   Valley-Polarized Metals and Quantum Anomalous Hall Effect in Silicene [J].
Ezawa, Motohiko .
PHYSICAL REVIEW LETTERS, 2012, 109 (05)