Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping

被引：0

作者：

Sun Jing-Chang ^{[1
]}

Liang Hong-Wei ^{[1
]}

Zhao Jian-Ze ^{[1
]}

Bian Ji-Ming ^{[1
]}

Feng Qiu-Ju ^{[1
]}

Wang Jing-Wei ^{[1
]}

Zhao Zi-Wen ^{[1
]}

Du Guo-Tong ^{[1
]}

机构：

[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2008年 / 25卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

ZnO homojunction light-emitting diodes are fabricated on Si(100) substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3 V and a reverse breakdown voltage higher than 6V. Distinct electroluminescence emissions centred at 395 nm and 490 nm are detected from this device at forward current higher than 20 mA at room temperature.

引用

页码：4345 / 4347

页数：3

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