Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)

被引：21

作者：

Nakamura, K. ^{[1
]}

Baba, M. ^{[1
]}

Khan, M. Ajmal ^{[1
]}

Du, W. ^{[1
]}

Sasase, M. ^{[2
]}

Hara, K. O. ^{[3
]}

Usami, N. ^{[3
,4
]}

Toko, K. ^{[1
]}

Suemasu, T. ^{[1
,4
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Wakasa Wan Energy Res Ctr, Tsuruga, Fukui 9140192, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[4] CREST, Japan Sci & Technol Agcy, Tokyo 1020075, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 05期

关键词：

MOLECULAR-BEAM EPITAXY; THIN-FILMS; COBALT DISILICIDE; KINETICS REGIMES; SELF-DIFFUSION; SILICON; GROWTH; SILICIDES; NI2SI; BULK;

D O I：

10.1063/1.4790597

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 180-nm-thick boron (B) layer was deposited on a 300-nm-thick a-axis-oriented BaSi2 epitaxial film grown by molecular beam epitaxy on Si(111) and was annealed at different temperatures in ultrahigh vacuum. The depth profiles of B were investigated using secondary ion mass spectrometry (SIMS) with O2+, and the diffusion coefficients of B were evaluated. The B profiles were reproduced well by taking both the lattice and the grain boundary (GB) diffusions into consideration. The cross-sectional transmission electron microscopy (TEM) image revealed that the GBs of the BaSi2 film were very sharp and normal to the sample surface. The plan-view TEM image exhibited that the grain size of the BaSi2 film was approximately 0.6 mu m. The temperature dependence of lattice and GB diffusion coefficients was derived from the SIMS profiles, and their activation energies were found to be 4.6 eV and 4.4 eV, respectively. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790597]

引用

页数：4

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