Graphene-based FETs

被引：0
作者：
Schwierz, Frank [1 ]
机构：
[1] Tech Univ Ilmenau, Fachgebiet Festkorperelekt, PF 100565, D-98684 Ilmenau, Germany
来源：
NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS | 2012年
关键词：
TRANSISTORS; TRANSPORT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Graphene is a purely two-dimensional carbon-based material that has attracted enormous attention in the recent past. In particular the high carrier mobilities observed in graphene have fuelled strong interest of device engineers in this material and soon graphene has been considered as the material for future electronics. It turned out, however, that the early assessments of the potential of graphene in mainstream electronics have been to optimistic. The present paper provides an overview on the current status of graphene transistors and discusses the strengths and weaknesses of these devices.
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页码：131 / 138
页数：8
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