The effect of p doping in InAs quantum dot lasers

被引：44

作者：

Sandall, IC

Smowton, PM

Walker, CL

Badcock, T

Mowbray, DJ

Liu, HY

Hopkinson, M

机构：

[1] Cardiff Univ, Sch Phys & Astron, Cardiff CF24 3YB, Wales

[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[3] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr 3 5 Technol, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2186078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We directly measure the modal gain and spontaneous emission spectra in three quantum dot structures that are nominally identical except for the level of p doping to ascertain the effect that p doping has on quantum dot lasers. The maximum modal gain increases at fixed quasi-Fermi level separation as the level of p doping increases from 0 to 15 to 50 acceptors per dot. The internal optical mode loss is similar for all three samples but the measured nonradiative current is larger for the p-doped structures.

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页数：3

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