Recombination mechanism of photoluminescence in InN epilayers

被引：30
作者：
Fu, SP
Chen, YF [1 ]
Tan, KW
机构：
[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
[2] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
来源：
SOLID STATE COMMUNICATIONS | 2006年 / 137卷 / 04期
关键词：
recombination mechanism; photoluminescence;
D O I：
10.1016/j.ssc.2005.11.013
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report an investigation of the recombination mechanism for photo luminescence (PL) in InN epilayers grown by molecular beam epitaxy and metal-organic chemical vapor deposition with a wide range of free electron concentrations from 3.5 X 10(17)-5 X 10(19) CM-3. We found that the PL spectra are strongly blueshifted with increasing excitation intensity. For all the samples studied, the exponent of the relationship between the integrated PL intensity and the excitation intensity is very close to unity and independent of the temperature. By assuming Gaussian fluctuations of the random impurity potential, calculation based on the 'free-to-bound' recombination model can be used to interpret our results very well and it correctly reproduces the development of the total PL peak shift as a function of carrier concentration. It is concluded that the PL transition mechanism in InN epifilms can be characterized as the recombination of free electrons in the conduction band to nonequilibrium holes in the valence band tail. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：203 / 207
页数：5
相关论文
共 34 条
[1]   Absorption and photoluminescence features caused by defects in InN [J].
Alexandrov, D ;
Butcher, KSA ;
Wintrebert-Fouquet, M .
JOURNAL OF CRYSTAL GROWTH, 2004, 269 (01) :77-86
[2]   Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels [J].
Arnaudov, B ;
Paskova, T ;
Paskov, PP ;
Magnusson, B ;
Valcheva, E ;
Monemar, B ;
Lu, H ;
Schaff, WJ ;
Amano, H ;
Akasaki, I .
PHYSICAL REVIEW B, 2004, 69 (11)
[3]   Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN -: art. no. 045213 [J].
Arnaudov, B ;
Paskova, T ;
Goldys, EM ;
Evtimova, S ;
Monemar, B .
PHYSICAL REVIEW B, 2001, 64 (04)
[4]   Ensemble Monte Carlo study of electron transport in wurtzite InN [J].
Bellotti, E ;
Doshi, BK ;
Brennan, KF ;
Albrecht, JD ;
Ruden, PP .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) :916-923
[5]   Polarization-based calculation of the dielectric tensor of polar crystals [J].
Bernardini, F ;
Fiorentini, V ;
Vanderbilt, D .
PHYSICAL REVIEW LETTERS, 1997, 79 (20) :3958-3961
[6]   ONR indium nitride workshop - Proceedings of the First International Indium Nitride workshop - 16-20 November 2003, Fremantle, Australia [J].
Butcher, KSA .
JOURNAL OF CRYSTAL GROWTH, 2004, 269 (01) :VII-VII
[7]  
BUTCHER KSA, 2004, ADV MAT ELECT
[8]  
CHANG CA, 2004, STATUS SOLIDI C, V1, P2559
[9]   Temperature-dependent optical properties of wurtzite InN [J].
Chen, F ;
Cartwright, AN ;
Lu, H ;
Schaff, WJ .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4) :308-312
[10]  
Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO
1234