Structural and dielectric properties of Ti and Er co-doped HfO2 gate dielectrics grown by RF sputtering

被引：20

作者：

Khaskheli, Murad Ali ^{[1
]}

Wu, Ping ^{[1
]}

Chand, Ram ^{[2
]}

Li, Xianfei ^{[1
]}

Wang, Hui ^{[1
]}

Zhang, Shiping ^{[1
]}

Chen, Sen ^{[1
]}

Pei, Yili ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Math & Phys, Beijing 100083, Peoples R China

[2] Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2013年 / 266卷

基金：

中国国家自然科学基金;

关键词：

High-k dielectrics; Thin films; HfTiErOx; Substrate temperature; Sputtering; THIN-FILMS; CONSTANT;

D O I：

10.1016/j.apsusc.2012.12.026

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This work reports on the structural and dielectric properties of high-k Ti and Er co-doped HfO2 (HfTiErOx) gate dielectrics deposited on Si(1 0 0) substrates by RF sputtering. Results indicate that the capacitance value of HfTiErOx gate dielectric at 100 degrees C substrate temperature is higher and exhibits a lower hysteresis voltage as well as interface trap density compared to HfO2, HfErOx and HfTiOx films at the same conditions in capacitance-voltage (C-V) curves. Furthermore, the structural, chemical compositions and photonics properties of these films have been explored by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Photo luminous (PL) measurements. The results are well attributed to crystalline HfTiErOx microstructure thus new chemical bonding of Hf-Ti-Er-O may exit. PL spectra of all the prepared samples exhibit peaks in range of similar to 2.82 to similar to 3.03 eV which is attributed to oxygen vacancies. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：355 / 359

页数：5

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