Controllable synthesis, growth mechanism and optical properties of the ZnSe quantum dots and nanoparticles with different crystalline phases

被引:17
作者
Feng, Bo [1 ,2 ,3 ]
Yang, Jinghai [3 ]
Cao, Jian [3 ]
Yang, Lili [3 ]
Gao, Ming [3 ]
Wei, Maobin [3 ]
Liu, Yang [3 ]
Song, Hang [1 ]
机构
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Phys, Changchun 130033, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
[3] Jilin Normal Univ, Inst Condensed State Phys, Siping 136000, Peoples R China
基金
中国国家自然科学基金;
关键词
Nanostructures; Semiconductors; Chemical synthesis; Optical properties; DOPED ZNSE; RAMAN-SCATTERING; COLLOIDAL ZNSE; NANOWIRES; NANOCRYSTALS; NANORODS; ROUTE; CDSE; SPECTROSCOPY; MORPHOLOGIES;
D O I
10.1016/j.materresbull.2012.11.100
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZnSe precursors were prepared by a solvothermal method at 180 degrees C without any surface-active agents. ZnSe quantum dots and nanoparticles were obtained by annealing the precursors at 300 C for 2 h in argon atmosphere. The ZnSe quantum dots were about 3.5 nm, while the ZnSe nanoparticles were about 21 nm, as observed using TEM. The growth mechanisms for the two samples were discussed; this proved that the high coordination ability of ethylenediamine to zinc played an important role in the final phase of the products. The ZnSe quantum dots with the wurtzite structure exhibited a strong near band-edge emission (NBE) peak centered at 422 nm, which was blue-shifted in comparison to that of the bulk ZnSe, which was mainly caused by the quantum confinement effect. However, the zinc blende ZnSe nanoparticles exhibited a near-band-edge luminescence peak centered at 472 nm. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1040 / 1044
页数:5
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