Seebeck Effect in Silicon Semiconductors

被引：23
|
作者：
Di Stefano, Vincenza [1 ]
Muscato, Orazio [1 ]
机构：
[1] Univ Catania, Dipartimento Matemat & Informat, I-95125 Catania, Italy
来源：
ACTA APPLICANDAE MATHEMATICAE | 2012年 / 122卷 / 01期
关键词：
Semiconductor devices; Hydrodynamic models; Seebeck effect; THERMOELECTRIC-POWER; CARRIER TRANSPORT; HEAT-GENERATION; MONTE-CARLO; PHONON; HYDRODYNAMICS; EQUATIONS; CLOSURE; DEVICES; MODEL;
D O I：
10.1007/s10440-012-9739-6
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
An extended hydrodynamic model will be used for the coupled system of electrons and phonons. This system is formed by a set of balance equations derived from the Bloch-Boltzmann-Peierls (BBP) kinetic equations applying the moment method and solving the problem of the closure by means of the Maximum Entropy Principle of Extended Thermodynamics. By using this model with a suitable limit, thermoelectric effects in bulk silicon are investigated.
引用
收藏
页码：225 / 238
页数：14
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