A 1-12-GHz variable-gain low-noise amplifier MMIC using 0.25-μm SiGe BiCMOS technology

被引：1

作者：

Chang, Woojin ^{[1
]}

Lee, Sang-Heung ^{[1
]}

Mun, Jae-Kyoung ^{[1
]}

Nam, Eunsoo ^{[1
]}

机构：

[1] ETRI, Convergence Components & Mat Res Lab, Dept Photon Wireless Convergence Components Res, RF Convergence Component Res Team, Taejon, South Korea

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2012年 / 54卷 / 08期

关键词：

variable-gain low-noise amplifier; silicon-germanium; BiCMOS; ultra-wideband; microwave monolithic integrated circuit; LOW-VOLTAGE; BAND;

D O I：

10.1002/mop.26936

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article introduces an 112-GHz differential two-stage variable-gain low-noise amplifier (VGLNA) using 0.25-mu m SiGe:C BiCMOS commercial process technology for ultra-wideband system.The results of the fabricated monolithic microwave integrated circuit amplifier show 18-dB gain with a 3-dB frequency band of 1.311.9 GHz and noise figure of less than 5 dB under the bias condition of 2.5-V supply voltage and 55-mW total dc power consumption. The gain-control range is from -17 dB to +18 dB. The chip size of the manufactured VGLNA is 1.1 x 0.9 mm2 including all testing pads for RF and dc probes. (C) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:19351937, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26936

引用

页码：1935 / 1937

页数：3

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