Formation of exciton rings and localized bright spots in coupled semiconductor quantum wells

被引:4
作者
Andreev, S. V. [1 ,2 ,3 ]
机构
[1] ITMO Univ, St Petersburg 197101, Russia
[2] Univ Paris Sud, CNRS, LPTMS, UMR8626, F-91405 Orsay, France
[3] Univ Bordeaux, LOMA UMR CNRS 5798, F-33405 Talence, France
关键词
CONDENSATION; CONFINEMENT; COHERENCE; STATE; TRAP;
D O I
10.1103/PhysRevB.94.165308
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We consider indirect excitons generated at the ring-shaped boundaries between electron-and hole-rich regions in semiconductor quantum wells (QW's). We show theoretically that the in-plane translational motion of the excitons is confined in the radial direction. The confinement potential results from the electrostatic interaction of the exciton dipole moment with the in-plane electric field induced at the boundary by the macroscopic charge separation. Our results directly apply to the external ring and the localized bright spots (LBS) observed in the photoluminescense (PL) pattern of indirect excitons.
引用
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页数:6
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