Nonlithographic random masking and regrowth of GaN microhillocks to improve light-emitting diode efficiency

被引：20

作者：

Lee, CL ^{[1
]}

Lee, SC

Lee, WI

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Microelect & Informat Syst Res Ctr, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 1-3期

关键词：

light-emitting diode; GaN; InGaN; surface roughness; MOCVD regrowth;

D O I：

10.1143/JJAP.45.L4

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, p-GaN microhillocks are grown on the top of a standard multiple-quantum-well (MQW) light-emitting diode (LED) with novel nonlithographic random masking. Such microhillocks can dramatically increase the external efficiency of the LED because of the destroyed symmetry of LED interfaces. By controlling metalorganic chemical vapor deposition (MOCVD) growth conditions, p-GaN microhillocks of various densities and sizes can be easily grown on a standard LED structure. The use of this novel method to grow microhillocks on the top of the LED can facilitate the control of the leakage current of LED compared that of the photo enhanced chemical (PEC) wet etch and inductively coupled plasma (ICP) dry etch methods.

引用

页码：L4 / L7

页数：4

共 14 条

[1] An ultrathin (∼100 μm thick) flexible light plate fabricated using self-alignment and lift-off techniques [J].

Chiang, Cheng-Chung ;

Wuu, Dong-Sing ;

Horng, Ray-Hua .

APPLIED PHYSICS LETTERS, 2007, 91 (18)

[2] InGaN/GaN single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions [J].

Florescu, DI ;

Ramer, JC ;

Lee, DS ;

Armour, EA .

APPLIED PHYSICS LETTERS, 2004, 84 (25) :5252-5254

[3] Formation of hexagonal GaN pyramids by photo assisted electroless chemical etching [J].

Fu, D ;

Park, YS ;

Panin, GN ;

Kang, TW .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (8-11) :L342-L344

[4] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].

Fujii, T ;

Gao, Y ;

Sharma, R ;

Hu, EL ;

DenBaars, SP ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857

[5] Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching [J].

Gao, Y ;

Fujii, T ;

Sharma, R ;

Fujito, K ;

Denbaars, SP ;

Nakamura, S ;

Hu, EL .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (5A) :L637-L639

[6] Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) [J].

Hiramatsu, K ;

Nishiyama, K ;

Onishi, M ;

Mizutani, H ;

Narukawa, M ;

Motogaito, A ;

Miyake, H ;

Iyechika, Y ;

Maeda, T .

JOURNAL OF CRYSTAL GROWTH, 2000, 221 (1-4) :316-326

[7] Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs [J].

Hsu, YP ;

Chang, SJ ;

Su, YK ;

Sheu, JK ;

Lee, CT ;

Wen, TC ;

Wu, LW ;

Kuo, CH ;

Chang, CS ;

Shei, SC .

JOURNAL OF CRYSTAL GROWTH, 2004, 261 (04) :466-470

[8] III-nitride UV devices [J].

Khan, MA ;

Shatalov, M ;

Maruska, HP ;

Wang, HM ;

Kuokstis, E .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10) :7191-7206

[9] High-performance 348 nm AlGaN/GaN-based ultraviolet-light-emitting diode with a SiN buffer layer [J].

Lee, YB ;

Wang, T ;

Liu, YH ;

Ao, JP ;

Izumi, Y ;

Lacroix, Y ;

Li, HD ;

Bai, J ;

Naoi, Y ;

Sakai, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (7A) :4450-4453

[10] Influence of undoped GaN layer thickness to the performance of AlGaN/GaN-based ultraviolet light-emitting diodes [J].

Liu, YH ;

Li, HD ;

Ao, JP ;

Lee, YB ;

Wang, T ;

Sakai, S .

JOURNAL OF CRYSTAL GROWTH, 2004, 268 (1-2) :30-34

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