Structure and luminescence of silicon nanocrystals embedded inSiO2

被引：13

作者：

Ross, G. G. ^{[1
]}

Barba, D. ^{[1
]}

Martin, F. ^{[1
]}

机构：

[1] INRS Energie Mat & Telecommun, Varennes, PQ J3X 1S2, Canada

来源：

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2008年 / 5卷 / 9-12期

关键词：

Si nanocrystals; luminescence; optoelectronic; Si laser; ion implantation; PECVD; PLD; superlattices; quantum confinement; interface states;

D O I：

10.1504/IJNT.2008.019829

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Semiconductors, there is no manufacturable solution to address the increasing interconnection lengths in microelectronic devices. Optical interconnects are known to be a possible solution to this problem. The integration of optoelectronic components on an all Si matrix would considerably simplify the conception and fabrication of integrated optoelectronic devices and low-dimensional silicon could play a key role in this integration. Silicon nanocrystals embedded in a silicon oxide layer show many of the required properties such as intense luminescent emission, good wave-guiding properties and sufficient light amplification. The aim of this review is to state the motivation for research in nanophotonics and present the state-of-the-art of this emerging technology. We will pay particular attention to the Canadian contribution in the progress of the research towards the realisation of all-Si optoelectronics technology.

引用

页码：984 / 1017

页数：34

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