Residual disorder and diffusion in thin Heusler alloy films

被引：6

作者：

Jenichen, B. ^{[1
]}

Herfort, J. ^{[1
]}

Hentschel, T. ^{[1
]}

Nikulin, A. ^{[1
]}

Kong, X. ^{[1
]}

Trampert, A. ^{[1
]}

Zizak, I. ^{[2
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Helmholtz Zentrum Mat & Energie, Inst Nanometeropt, D-12489 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 07期

关键词：

CURIE-TEMPERATURE; PHASE-SEPARATION; DIFFRACTION; SPINTRONICS; CO2FESI;

D O I：

10.1103/PhysRevB.86.075319

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Co2FeSi/GaAs(110) and Co2FeSi/GaAs(111)B hybrid structures were grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and x-ray diffraction. The films contained inhomogeneous distributions of ordered L2(1) and B2 phases. The average stoichiometry was controlled by lattice parameter measurements; however, diffusion processes led to inhomogeneities of the atomic concentrations and the degradation of the interface, influencing long-range order. An average long-range order of 30-60% was measured by grazing-incidence x-ray diffraction, i.e., the as-grown Co2FeSi films were highly but not fully ordered. Lateral inhomogeneities of the spatial distribution of long-range order in Co2FeSi were found using dark-field TEM images taken with superlattice reflections.

引用

页数：7

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