Characterization of pseudomorphic γ-Ga2O3 and γ-Al2O3 films on MgAl2O4 substrates and the band-alignment at the coherent γ-Ga2O3/Al2O3 heterojunction interface

被引：15
|
作者：
Oshima, Takayoshi [1 ]
Kato, Yuji [1 ]
Magome, Eisuke [2 ]
Kobayashi, Eiichi [2 ]
Takahashi, Kazutoshi [3 ]
机构：
[1] Saga Univ, Dept Elect & Elect Engn, 1 Honjo, Saga, Saga 8408502, Japan
[2] Kyushu Synchrotron Light Res Ctr, 8-7 Yayoigaoka, Tosu, Saga 8410005, Japan
[3] Saga Univ, Synchrotron Light Applicat Ctr, 1 Honjo, Saga, Saga 8408502, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / 06期
关键词：
ALPHA-AL2O3; GROWTH; SPINEL; GAMMA; PHASE;
D O I：
10.7567/1347-4065/ab219f
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We characterized 3.0 nm gamma-Ga2O3, 3.0 nm gamma-Al2O3, and 1.0/3.0 nm gamma-Ga2O3/Al2O3 films grown on (100) MgAl2O4 substrates. X-ray diffraction measurements revealed that gamma-Ga2O3 and gamma-Al2O3 films were coherent to the substrate with Poisson's ratios of 0.31 and 0.28. While, X-ray photoelectron spectroscopy found that band gaps of the gamma-Ga2O3 and gamma-Al2O3 films were 5.6 and 7.4 eV, respectively, and that the gamma-Ga2O3/Al2O3 heterojunction had type-I band alignment with conduction-and valence-band-offsets of 1.6 and 0.2 eV, respectively. These findings regarding the end members of gamma-(AlxGa1-x)(2)O-3 will be beneficial for further study on gamma-(AlxGa1-x)(2)O-3-based heterostructures. (C) 2019 The Japan Society of Applied Physics
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页数：5
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