Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy

被引：15
作者：
Zhang, BP
Li, YQ
Yasuda, T
Wang, WX
Segawa, Y
Edamatsu, K
Itoh, T
机构：
[1] Inst Phys & Chem Res, RIKEN, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 9800868, Japan
[2] Tohoku Univ, Dept Appl Phys, Aoba Ku, Sendai, Miyagi 9808579, Japan
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 09期
关键词：
D O I：
10.1063/1.122370
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the intermittent photoluminescence of ZnCdSe quantum dots (QDs) embedded in a ZnSe matrix grown by molecular beam epitaxy. The luminous time of the QD is strongly dependent on temperature but not on excitation intensity. This indicates that the ionization of the QDs is determined predominantly by thermal excitation of carriers into the ZnSe matrix. (C) 1998 American Institute of Physics. [S0003-6951(98)03135-0].
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收藏
页码：1266 / 1268
页数：3
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