Dynamics of modification of Ni/n-GaN Schottky barrier diodes irradiated at low temperature by 200 MeV Ag14+ ions

被引：22

作者：

Kumar, Ashish ^{[1
,2
]}

Kumar, Tanuj ^{[2
]}

Haehnel, A. ^{[3
]}

Kanjilal, D. ^{[2
]}

Singh, R. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, New Delhi 110016, India

[2] Inter Univ Accelerator Ctr, New Delhi 110067, India

[3] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 03期

关键词：

CURRENT-VOLTAGE CHARACTERISTICS; ELECTRICAL CHARACTERISTICS; DAMAGE;

D O I：

10.1063/1.4862471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ni/GaN Schottky barrier diodes were irradiated with 200 MeV Ag ions up to fluence of 1 x 10(11) ions/cm(2) at the substrate temperature of 80 K. Post-irradiation current-voltage measurements showed that the ideality factor, n increased and the reverse leakage current, I-R decreased with increase in fluence. But Schottky barrier height, phi(b) increased only marginally with increase in ion fluence. In situ resistivity measurements showed orders of magnitude increase in resistivity of GaN epitaxial film with irradiation fluence. Cross-sectional transmission electron microscopy images revealed the presence of defect clusters in bulk GaN after irradiation. (C) 2014 AIP Publishing LLC.

引用

页数：4

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