Electromigration behavior of Sn3.0Ag0.5Cu/Sn58Bi structural composite solder interconnect

被引：0

作者：

Wang, Fengjiang ^{[1
]}

Zhou, Lili ^{[1
]}

Wang, Xiaojing ^{[1
]}

机构：

[1] Jiangsu Univ Sci & Technol, Prov Key Lab Adv Welding Technol, Zhenjiang 212003, Peoples R China

来源：

2016 17TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2016年

关键词：

eiectromigration; structural composite; microstructure; JOINTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microstructure and electromigration of Bi and Sn in Cu/Sn58Bi/Cu and Cu/Sn58Bi / Sn3.0Ag0.5Cu/ Sn58Bi/Cu structural composite solder joint, were researched under the current density of 1.0X10(4) A/cm(2) at room temperature. Two kinds of solder joints changed their morphology at both anode sides and cathode sides after current stressing. Bi layer was formed in the anode side while Sn layer was formed in the cathode side. The microanalysis indicated that Bi was the major diffusion element from cathode to anode and the migration of atomic Bi was faster than atomic Sn. Furthermore, through the comparison of two kinds of solder joints, it was easy to find that Sn3.0Ag0.5Cu suppressed the migration of atomic Bi and atomic Sn during electromigration.

引用

页码：268 / 272

页数：5

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