Electromigration behavior of Sn3.0Ag0.5Cu/Sn58Bi structural composite solder interconnect

被引：0
作者：
Wang, Fengjiang [1 ]
Zhou, Lili [1 ]
Wang, Xiaojing [1 ]
机构：
[1] Jiangsu Univ Sci & Technol, Prov Key Lab Adv Welding Technol, Zhenjiang 212003, Peoples R China
来源：
2016 17TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2016年
关键词：
eiectromigration; structural composite; microstructure; JOINTS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The microstructure and electromigration of Bi and Sn in Cu/Sn58Bi/Cu and Cu/Sn58Bi / Sn3.0Ag0.5Cu/ Sn58Bi/Cu structural composite solder joint, were researched under the current density of 1.0X10(4) A/cm(2) at room temperature. Two kinds of solder joints changed their morphology at both anode sides and cathode sides after current stressing. Bi layer was formed in the anode side while Sn layer was formed in the cathode side. The microanalysis indicated that Bi was the major diffusion element from cathode to anode and the migration of atomic Bi was faster than atomic Sn. Furthermore, through the comparison of two kinds of solder joints, it was easy to find that Sn3.0Ag0.5Cu suppressed the migration of atomic Bi and atomic Sn during electromigration.
引用
收藏
页码：268 / 272
页数：5
相关论文
共 18 条
  • [1] Observations of nucleation catalysis effects during solidification of SnAgCuX solder joints
    Anderson, I. E.
    Walleser, J.
    Harringa, J. L.
    [J]. JOM, 2007, 59 (07) : 38 - 43
  • [2] ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE
    BLECH, IA
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1203 - 1208
  • [3] Electromigration enhanced intermetallic growth and void formation in Pb-free solder joints
    Chao, Brook
    Chae, Seung-Hyun
    Zhang, Xuefeng
    Lu, Kuan-Hsun
    Ding, Min
    Im, Jay
    Ho, Paul S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (08)
  • [4] The difference in the types of intermetallic compound formed between the cathode and anode of an Sn-Ag-Cu solder joint under current stressing
    Chiu, Tsung-Chieh
    Lin, Kwang-Lung
    [J]. INTERMETALLICS, 2009, 17 (12) : 1105 - 1114
  • [5] Christou A., 1993, Electromigration and Electronic Device Degradation
  • [6] Electromigration failure in flip chip solder joints due to rapid dissolution of copper
    Hu, YC
    Lin, YH
    Kao, CR
    Tu, KN
    [J]. JOURNAL OF MATERIALS RESEARCH, 2003, 18 (11) : 2544 - 2548
  • [7] Hua F, 1999, IPC WORKS, V99, p[3, 8, 1, 6]
  • [8] Huntington H.B., 1975, Diffusion in Solids: Recent Developments, P303
  • [9] Jae H. K., 2014, MICROELECTRONIC ENG, V120, P77
  • [10] Electromigration of Sn-37Pb and Sn-3Ag-1.5Cu/Sn-3Ag-0.5Cu composite flip-chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy
    Lai, Yi-Shao
    Chen, Kuo-Ming
    Kao, Chin-Li
    Lee, Chiu-Wen
    Chiu, Ying-Ta
    [J]. MICROELECTRONICS RELIABILITY, 2007, 47 (08) : 1273 - 1279
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