Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy

被引：18

作者：

Doi, Tomohiro ^{[1
]}

Honda, Yoshio ^{[1
]}

Yamaguchi, Masahito ^{[1
]}

Amano, Hiroshi ^{[1
]}

机构：

[1] Nagoya Univ, Akasaki Res Ctr, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 08期

关键词：

QUANTUM-WELLS; HIGH-POWER; INGAN; GAN;

D O I：

10.7567/JJAP.52.08JB14

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN/AlGaN multi-quantum wells (MQWs) were grown by metalorganic vapor phase epitaxy. The In composition of the InGaN well layer was found to increase with the tensile strain of the AlGaN barrier layer. The InGaN/AlGaN strain-compensated structure can be grown at a higher growth temperature than that of the InGaN/GaN MQW, which shows that the same emission wavelength and thus the density of the V-defects can be effectively suppressed. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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