Diode-Side-Pumped Passively Q-Switched Mode-Locked 532 nm Laser with a Nd:YAG/Cr4+:YAG/YAG Composite Crystal

被引：5

作者：

Zhu, Siqi ^{[1
]}

Chen, Zaijun ^{[1
]}

Chen, Zhenqiang ^{[1
,2
]}

Jiang, Wei ^{[1
]}

Zhang, Qingmao ^{[3
]}

Chen, Yihong ^{[3
]}

Li, Anming ^{[1
]}

Yin, Hao ^{[2
]}

Li, Zhen ^{[2
]}

机构：

[1] Guangdong Higher Educ Inst, Key Lab Optoelect Informat & Sensing Technol, Guangzhou 510632, Guangdong, Peoples R China

[2] Jinan Univ, Inst Optoelect Engn, Guangzhou 510632, Guangdong, Peoples R China

[3] S China Normal Univ, Sch Informat & Optoelect Sci & Engn, Guangzhou 510632, Guangdong, Peoples R China

来源：

JOURNAL OF RUSSIAN LASER RESEARCH | 2013年 / 34卷 / 06期

关键词：

Q-switched mode-locked diode-side-pumped composite crystal; green laser; GREEN LASER; SATURABLE ABSORBER; RAMAN LASER; LOCKING; CR4+-YAG; SESAM;

D O I：

10.1007/s10946-013-9389-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present a diode-side-pumped Q-switched mode-locked (QML) laser operating at 532 nm for the first time employing a composite crystal Nd:YAG/Cr4+:YAG/YAG and a KTP. The experimental results show that, using a suitable cavity and crystals, one can obtain high-quality QML laser output at 532 nm with a side-pumped system. We measure and analyze the QML performance of the fundamental frequency laser and the green laser. Under a pump power of 127 W, we obtain a QML laser operating at 532 nm with an average power of 4.97 W and a repetition rate of 0.2 GHz for the mode-locked pulses; the corresponding depth of modulation is close to 100%.

引用

页码：575 / 580

页数：6

共 16 条

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