Sintering of nano crystalline a silicon carbide doping with aluminium nitride

被引：3
作者：
Datta, MS
Bandyopadhyay, AK [1 ]
Chaudhuri, B
机构：
[1] Coll Ceram Technol, Kolkata 700010, India
[2] Jadavpur Univ, Dept Met Engn, Kolkata 700032, W Bengal, India
来源：
BULLETIN OF MATERIALS SCIENCE | 2002年 / 25卷 / 02期
关键词：
sintering mechanism; silicon carbide; aluminium nitride; polytype;
D O I：
10.1007/BF02706231
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Sinterable silicon carbide powders were prepared by attrition milling and chemical processing of an acheson type alpha-SiC. Pressureless sintering of these powders was achieved by addition of aluminium nitride together with carbon. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by scanning electron microscopy and transmission electron microscopy. This study shows that the mechanism is a solid state sintering process.
引用
收藏
页码：121 / 125
页数：5
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